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| 2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features * * * * Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source * Suitable for Switching regulator, DC - DC converter 12 3 2, 4 12 3 1. 2. 3. 4. Gate Drain Source Drain 1 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 30 10 10 40 10 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2329 L , 2SK2329 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 200 A, VDS = 0 VGS = 6.5 V, VDS = 0 VDS = 25 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 10 -- -- V -------------------------------------------------------------------------------------- -- -- 0.4 -- -- -- -- 0.03 10 100 1.4 0.04 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 5 A VGS = 4 V * ID = 5 A VGS = 2.5 V * ID = 5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 4 V RL = 2 ------------------------------------------------ -- 0.04 0.06 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 18 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1250 540 120 20 145 225 125 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 100 -- ns -------------------------------------------------------------------------------------- 2SK2329 L , 2SK2329 S Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area 100 50 10 10 DC s s 30 20 10 5 2 1 0.5 0.2 Ta = 25 C PW Op =1 1m 0m n( 0 s ho t) Channel Dissipation Drain Current 20 Operation in this area is limited by R DS(on) era tio s( Tc 1s =2 5 C) 10 0 50 100 150 Tc (C) 200 0.1 0.5 Case Temperature 1 2 5 10 20 50 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V 5V 4V 2.5 V 20 2V Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 12 ID Drain Current (A) 16 16 Drain Current 12 Tc = 75C 25C 4 -25C 8 VGS = 1.5 V 8 4 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 2SK2329 L , 2SK2329 S Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test 0.8 Drain to Source On State Resistance R DS(on) ( ) 1.0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = 2.5 V 4V Drain to Source Voltage 0.6 0.4 I D = 10 A 0.2 5A 2A 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.05 0.02 0.01 0.1 0.2 0.5 1 2 0 5 10 20 50 100 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 I D = 2 A, 5 A, 10 A 50 Forward Transfer Admittance vs. Drain Current 20 10 Tc = -25 C 25 C 0.06 2.5 V 5 2 1 0.5 0.1 75 C 0.04 2 A, 5 A, 10 A V GS = 4 V 0.02 0 -40 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SK2329 L , 2SK2329 S Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 5000 VGS = 0 f = 1 MHz 2000 Ciss 1000 500 Coss 200 100 50 200 100 50 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Crss 20 10 0.2 di/dt = 20 A/s V GS = 0, Ta = 25C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) Dynamic Input Characteristics V DS (V) V GS (V) 100 20 1000 Switching Characteristics V GS = 4 V, V DD = 10 V 500 PW = 3 s, duty < 1 % Switching Time t (ns) t d(off) 200 tf 100 50 tr t d(on) 20 10 0.2 80 V DD = 10 V 25 V 60 V GS 40 V DS 20 V DD = 25 V 10 V 0 20 40 60 80 Gate Charge Qg (nc) I D = 10 A 16 Drain to Source Voltage 12 8 4 0 100 Gate to Source Voltage 0.5 1 2 Drain Current 5 10 I D (A) 20 2SK2329 L , 2SK2329 S Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16 12 V GS = 0, -5 V 5V 4 8 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 1 0.0 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2329 L , 2SK2329 S Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 10 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
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